Open AccessFEATURES OF ULTRASOUNF INFLUENCE ON THE CHARGE TRANSPORT IN SILICON SCHOTTKY BARRIER STRUCTURES DEPENDING ON γ-IRRADIATION DOSE
Author(s) -
О. Я. Оліх
Publication year - 2013
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2013.1.112595
Subject(s) - irradiation , materials science , thermionic emission , schottky barrier , quantum tunnelling , silicon , phonon , optoelectronics , schottky diode , ionization , atomic physics , condensed matter physics , chemistry , electron , physics , ion , organic chemistry , diode , quantum mechanics , nuclear physics
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