z-logo
open-access-imgOpen Access
EFFECT OF COMBINED X-RAY AND LASER PULSE RADIATION ON THE PARAMETERS OF SILICON MOS-TRANSISTORS
Author(s) -
Bohdan Koman
Publication year - 2012
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2012.4.115268
Subject(s) - silicon , materials science , laser , transistor , radiation , optoelectronics , impurity , dielectric , x ray , interphase , irradiation , pulse (music) , atomic physics , optics , electrical engineering , chemistry , voltage , physics , organic chemistry , detector , biology , nuclear physics , genetics , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom