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EFFECT OF COMBINED X-RAY AND LASER PULSE RADIATION ON THE PARAMETERS OF SILICON MOS-TRANSISTORS
Author(s) -
Bohdan Koman
Publication year - 2012
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2012.4.115268
Subject(s) - silicon , materials science , laser , transistor , radiation , optoelectronics , impurity , dielectric , x ray , interphase , irradiation , pulse (music) , atomic physics , optics , electrical engineering , chemistry , voltage , physics , organic chemistry , detector , biology , nuclear physics , genetics , engineering

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