z-logo
open-access-imgOpen Access
PROPERTIES OF ZnSe AND CdTe DOPED BY ISOVALENT IMPURITY Сa
Author(s) -
М. М. Сльотов,
Igor German,
О. М. Сльотов,
Василь Васильович Косоловський
Publication year - 2012
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2012.3.114942
Subject(s) - photosensitivity , impurity , doping , cadmium telluride photovoltaics , materials science , irradiation , phosphor , optoelectronics , enhanced data rates for gsm evolution , optics , chemistry , physics , telecommunications , organic chemistry , computer science , nuclear physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom