Open AccessTHE ANALYSIS OF TEMPERATURE DEPENDENCES OF PHOTOCURRENT AMPLIFICATION FACTOR AND OF QUANTUM EFFICIENCY OF SILICON P-I-N-PHOTODETECTORS, INTENDED FOR RADIATION REGISTRATION IN INFRARED AREA OF SPECTRUM, SPENT FOR VARIOUS DENSITY OF DISLOCATIONS IN DEVICES
Author(s) -
Olga Sviridova
Publication year - 2012
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2012.2.112994
Subject(s) - photocurrent , photodetector , silicon , quantum efficiency , infrared , materials science , optoelectronics , photoconductivity , optics , physics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom