THE INFLUENCE OF ALPHA-IRRADIATION ON THE SILICON MOS –TRANSISTORS
Author(s) -
Bohdan Koman
Publication year - 2012
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2012.1.112938
Subject(s) - irradiation , materials science , transistor , silicon , alpha particle , silicon on insulator , ion , optoelectronics , threshold voltage , radiation , atomic physics , electrical engineering , voltage , chemistry , physics , nuclear physics , engineering , organic chemistry
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