Open AccessEFFECT OF THE STRUCURE OF SILICON P-N JUNCTIONS ON THEIR CHARACTERISTICS AS GAS SENSORS
Author(s) -
Ф. О. Птащенко,
О. О. Птащенко,
Г. В. Довганюк
Publication year - 2011
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2011.4.118570
Subject(s) - doping , silicon , adsorption , materials science , molecule , quantum tunnelling , sensitivity (control systems) , impurity , chemical physics , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , electronic engineering , organic chemistry , engineering
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