Open AccessELECTRONIC PROPERTIES OF FET STRUCTURES WITH QDS LAYER UNDER THE GATE AREA
Author(s) -
V. V. Ilchenko,
Ш. Д. Лін,
В. В. Марін,
О. В. Третяк
Publication year - 2011
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2011.1.116330
Subject(s) - quantum dot , optoelectronics , materials science , transistor , capacitance , heterojunction , field effect transistor , layer (electronics) , channel (broadcasting) , induced high electron mobility transistor , electron , conductivity , voltage , nanotechnology , electrical engineering , electrode , chemistry , physics , quantum mechanics , engineering
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