Open AccessINFLUENCE OF UNIAXIAL ELASTIC DEFORMATION ON MOBILITY OF CARRIERS OF THE CURRENT IN CRYSTALS n − Si AND n −Ge IN THE PRESENCE OF DEEP ENERGETIC LEVELS
Author(s) -
S. V. Luniov
Publication year - 2014
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2010.1.113980
Subject(s) - materials science , condensed matter physics , phonon , deformation (meteorology) , germanium , electron mobility , silicon , optoelectronics , composite material , physics