GAS SENSITIVITY OF THE STRUCTURES WITH POROUS SILICON LAYER MODIFIED BY METAL
Author(s) -
А.А. Еvtukh,
T.I. Gorbanyuk,
D. Danilyuk,
В. Г. Литовченко,
V.S. Solntsev,
G. V. Kuznetsov,
V. A. Skryshevsky,
G. I. Tsyganova
Publication year - 2008
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2008.3.114668
Subject(s) - nanoporous , silicon , materials science , porous silicon , adsorption , chemical engineering , copper , layer (electronics) , hydrogen , metal , substrate (aquarium) , porosity , inorganic chemistry , schottky barrier , platinum , nanotechnology , chemistry , composite material , metallurgy , catalysis , organic chemistry , optoelectronics , diode , oceanography , geology , engineering
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