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EFFECT OF ANNEALING ON DEFECT STRUCTURE OF GaMnAs AND Si:Mn
Author(s) -
J. BąkMisiuk,
E. Dynowska,
P. Romanowski,
A. Misiuk,
A. Shalimov,
J. Z. Domagalaa,
E. Łusakowska,
Janusz Sadowski,
W. Caliebe,
W. Szuszkiewicz,
J. Trela
Publication year - 2007
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2007.4.114106
Subject(s) - annealing (glass) , materials science , secondary ion mass spectroscopy , condensed matter physics , ion , atomic force microscopy , lattice constant , lattice (music) , spectroscopy , analytical chemistry (journal) , silicon , optoelectronics , metallurgy , chemistry , nanotechnology , diffraction , optics , organic chemistry , chromatography , quantum mechanics , acoustics , physics

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