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IMPROVEMENT OF PHOTOSENSITIVITY OF SI- SENSORS MADE BY THE METHOD OF ACOUSTOSTIMULATED IMPLANTATION OF BORON AND ARSINE IONS
Author(s) -
Yo. V. Goltvyansciy,
V. F. Machoulin,
Ya. M. Olih,
V. G. Popov,
B. M. Romanjuc
Publication year - 2007
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2007.2.113439
Subject(s) - photosensitivity , impurity , ultraviolet , silicon , boron , materials science , optoelectronics , ion , common emitter , arsine , irradiation , reduction (mathematics) , ion implantation , doping , analytical chemistry (journal) , chemistry , physics , phosphine , biochemistry , organic chemistry , chromatography , nuclear physics , catalysis , geometry , mathematics

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