Open AccessINVESTIGATION OF ELECTROPHYSICAL PARAMETERS OF SILICON P-I-N PHOTODIODES
Author(s) -
Vladimir L. Perevertaylo,
В. М. Попов,
O. P. Pockanevich,
L. I. Tarasenko
Publication year - 2007
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2007.1.113085
Subject(s) - photodiode , materials science , silicon , optoelectronics , insulator (electricity) , semiconductor , dielectric , silicon on insulator , voltage , electrical engineering , engineering
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