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PHOTODETECTOR ON THE BASE OF UNIJUNCTION AND FIELD-EFFECT PHOTOTRANSISTORS
Author(s) -
І. М. Викулин,
Ш. Д. Курмашев,
V. A. Mingalov
Publication year - 2014
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2006.4.112797
Subject(s) - transistor , common emitter , optoelectronics , photosensitivity , materials science , base (topology) , photodetector , field effect transistor , resistor , heterostructure emitter bipolar transistor , bipolar junction transistor , photoresistor , electrical engineering , physics , engineering , voltage , mathematics , mathematical analysis

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