HIGH-QUALITY TEMPERATURE SENSORS ON THE SILICON p-n-JUNCTION BASIS | Zendy

V. M. Vassuliuk | Zendy; А. М. Леновенко | Zendy; Natalia Kovalchuk | Zendy

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HIGH-QUALITY TEMPERATURE SENSORS ON THE SILICON p-n-JUNCTION BASIS

Author(s) -

V. M. Vassuliuk,

А. М. Леновенко,

Natalia Kovalchuk

Publication year - 2014

Publication title -

sensor electronics and microsystem technologies

Language(s) - English

Resource type - Journals

eISSN - 2415-3508

pISSN - 1815-7459

DOI - 10.18524/1815-7459.2006.3.112546

Subject(s) - converters , silicon , thermal , atmospheric temperature range , basis (linear algebra) , materials science , range (aeronautics) , fabrication , production (economics) , optoelectronics , sequence (biology) , quality (philosophy) , computer science , engineering physics , electronic engineering , electrical engineering , mathematics , physics , thermodynamics , engineering , chemistry , voltage , composite material , geometry , quantum mechanics , medicine , biochemistry , alternative medicine , pathology , macroeconomics , economics

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