Open AccessSTUDY OF POLYSILICON-ON-INSULATOR LAYERS LOW-TEMPERATURE CHARACTERISTICS TO CREATE TEMPERATURE AND MECHANICAL SENSORS
Author(s) -
Anatoly Druzhinin,
І. I. Maryamova,
Igor Kogut,
Yuriy Khoverko
Publication year - 2014
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2006.2.117519
Subject(s) - materials science , piezoresistive effect , magnetoresistance , atmospheric temperature range , insulator (electricity) , polysilicon depletion effect , optoelectronics , recrystallization (geology) , silicon on insulator , doping , composite material , silicon , magnetic field , transistor , electrical engineering , voltage , paleontology , physics , quantum mechanics , meteorology , biology , engineering , gate oxide
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom