Open AccessMIS-PHOTOTRANSISTOR WITH p-n-…-p-n-STRUCTURE AS A GATE
Author(s) -
І. М. Викулин,
Ш. Д. Курмашев,
V. A. Mingalev,
Yu. G. Tumanov
Publication year - 2014
Publication title -
sensor electronics and microsystem technologies
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2005.2.112267
Subject(s) - photodiode , optoelectronics , photodetector , photosensitivity , transistor , sensitivity (control systems) , materials science , ultraviolet , channel (broadcasting) , field effect transistor , photoresistor , absorption (acoustics) , semiconductor , voltage , electrical engineering , electronic engineering , engineering , composite material
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