Open AccessINVESTIGATION OF THE CAUSES OF SILICON MOS — TRANSISTOR PARAMETERS CATASTROPHIC DEGRADATION
Author(s) -
Оксана Андріївна Кулініч,
М. А. Глауберман,
G. Chemeresuk,
I. Yatsunsky
Publication year - 2014
Publication title -
sensorna elektronìka ì mìkrosistemnì tehnologìï
Language(s) - English
Resource type - Journals
eISSN - 2415-3508
pISSN - 1815-7459
DOI - 10.18524/1815-7459.2005.1.112262
Subject(s) - materials science , silicon , silicide , degradation (telecommunications) , transistor , intermetallic , photolithography , optoelectronics , brittleness , metallurgy , engineering physics , electrical engineering , engineering , alloy , voltage