Open AccessComposition of Magnetic Tunnel Junction-Based Magnetoresistive Random Access Memory for Field-Programmable Gate Array
Author(s) -
S. Hamsa,
N. Thangadurai,
A. G. Ananth
Publication year - 2020
Publication title -
current science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.281
H-Index - 118
ISSN - 0011-3891
DOI - 10.18520/cs/v119/i1/119-123
Subject(s) - tunnel magnetoresistance , magnetoresistance , magnetoresistive random access memory , gate array , materials science , magnetic field , composition (language) , random access memory , magnetic storage , optoelectronics , field programmable gate array , nanotechnology , physics , engineering , computer science , embedded system , computer hardware , layer (electronics) , linguistics , philosophy , quantum mechanics