Open AccessInfluence of backlighting on current-voltage characteristics of InGaN / GaN-based structures with back-shift
Author(s) -
D. Y. Vostretsov,
AUTHOR_ID,
L. N. Vostretsova,
Т. С. Смирнова,
D. P. Dmitriev,
AUTHOR_ID,
AUTHOR_ID,
AUTHOR_ID
Publication year - 2021
Publication title -
izvestiâ saratovskogo universiteta. novaâ seriâ. seriâ fizika
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.163
H-Index - 2
eISSN - 2542-193X
pISSN - 1817-3020
DOI - 10.18500/1817-3020-2021-21-4-372-380
Subject(s) - backlight , current (fluid) , optoelectronics , materials science , voltage , engineering physics , electrical engineering , liquid crystal display , engineering