Open AccessElectrophysical and optical properties of the silicon carbide device structures
Publication year - 2019
Publication title -
fizika volnovyh processov i radiotehničeskie sistemy
Language(s) - English
Resource type - Journals
eISSN - 2782-294X
pISSN - 1810-3189
DOI - 10.18469/1810-3189.2019.22.1.57-66
Subject(s) - materials science , silicon carbide , profilometer , silicon , substrate (aquarium) , optics , refractive index , scanning electron microscope , surface roughness , nanocrystalline silicon , surface finish , optoelectronics , composite material , crystalline silicon , amorphous silicon , oceanography , physics , geology