Open AccessGaN HEMT study at cryotemperatures
Author(s) -
В. В. Краснов,
В.М. Миннебаев,
С.В. Миннебаев,
An.V. Redka
Publication year - 2020
Publication title -
conference materials
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.18411/gdsn-25-02-2020-10
Subject(s) - high electron mobility transistor , optoelectronics , materials science , computer science , electrical engineering , engineering , transistor , voltage