Open AccessPhoto-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films
Author(s) -
Oleg Prikhodko,
N. Almasov,
N. Korobova,
S. Duysembaev,
K. N. Turmanova,
K. D. Tséndin
Publication year - 2010
Publication title -
eurasian chemico-technological journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.227
H-Index - 9
eISSN - 2522-4867
pISSN - 1562-3920
DOI - 10.18321/ectj56
Subject(s) - chalcogenide , amorphous solid , sputtering , materials science , semiconductor , analytical chemistry (journal) , ion , amorphous semiconductors , chemistry , thin film , crystallography , optoelectronics , nanotechnology , organic chemistry , chromatography
The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.