Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films | Zendy

O. Prikhodko | Zendy; N. Almasov | Zendy; N. Korobova | Zendy; S. Duysembaev | Zendy; K. N. Turmanova | Zendy; K. D. Tséndin | Zendy

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Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Author(s) -

O. Prikhodko,

N. Almasov,

N. Korobova,

S. Duysembaev,

K. N. Turmanova,

K. D. Tséndin

Publication year - 2010

Publication title -

eurasian chemico-technological journal

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.227

H-Index - 9

eISSN - 2522-4867

pISSN - 1562-3920

DOI - 10.18321/ectj56

Subject(s) - chalcogenide , amorphous solid , sputtering , materials science , semiconductor , analytical chemistry (journal) , ion , amorphous semiconductors , chemistry , thin film , crystallography , optoelectronics , nanotechnology , organic chemistry , chromatography

The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

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