Open AccessElectrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity
Author(s) -
Х. С. Каримов,
Mai M.A. Ahmed,
Syed Abdul Moiz,
P. Babadzhanov,
Р. Марупов,
M.A. Turaeva
Publication year - 2007
Publication title -
eurasian chemico-technological journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.227
H-Index - 9
eISSN - 2522-4867
pISSN - 1562-3920
DOI - 10.18321/ectj297
Subject(s) - electrode , analytical chemistry (journal) , materials science , gallium , vacuum evaporation , rectification , nickel , semiconductor , thin film , nitrogen , biasing , metal , organic semiconductor , voltage , optoelectronics , chemistry , metallurgy , electrical engineering , nanotechnology , chromatography , engineering , organic chemistry
In this study the electrical properties of organic semiconductor orange nitrogen dye (OND) have been examined. Thin film samples were deposited from OND solution in water on a nickel substrate (it was the first electrode) at room temperature at different gravity conditions including, 1 g (reference samples), 123 g, 277 g and 1107 g by a centrifugal machine. As a second electrode of the samples a gallium drop was used. The voltage-current characteristics of the samples were measured at temperature interval of 30°C - 60°C. It was found that all voltage-current characteristics were asymmetrical with slightly rectification behavior. The resistances of the samples decrease monotonously with temperature but with acceleration they show minimum around of 123 g. As a rule the forward bias resistance ("+" voltage was applied to gallium) were less than reverse bias ones ("+" voltage was applied to nickel). The electric behavior of the samples analyzed by the conception of space-charge limited currents (SCLC) at the presence of two different kinds of metallic electrodes (Ni and Ga) in the samples.