z-logo
open-access-imgOpen Access
Die separation strength for deep reactive ion etched wafers.
Author(s) -
Daniel Porter
Publication year - 2010
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.18297/etd/1144
Subject(s) - deep reactive ion etching , wafer dicing , die (integrated circuit) , materials science , wafer , etching (microfabrication) , microfabrication , bending , composite material , substrate (aquarium) , silicon , grinding , reactive ion etching , optoelectronics , nanotechnology , layer (electronics) , fabrication , medicine , oceanography , alternative medicine , pathology , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom