Open AccessASSOCIATES OF DOT DEFECTS OF VARIOUS NATURE IN SiC-PHASE OF SEMICONDUCTOR HETEROSTRUCTURE OF SiC//Si, RECEIVEDBY ENDOTAKSIYA METHOD
Author(s) -
В. И. Чепурнов
Publication year - 2014
Publication title -
vestnik samarskogo universiteta. estestvennonaučnaâ seriâ
Language(s) - English
Resource type - Journals
eISSN - 2712-8954
pISSN - 2541-7525
DOI - 10.18287/2541-7525-2014-20-7-145-162
Subject(s) - silicon carbide , heterojunction , impurity , materials science , semiconductor , supersaturation , silicon , substrate (aquarium) , phase (matter) , optoelectronics , chemistry , composite material , oceanography , organic chemistry , geology
One of the main ways of increasing of reliability of sensors of physical quantities on the basis of high-temperature and radiation-hardened heterostructure of β-SiC/Si is the analysis of technological aspects of its forming (endotaksiya) regarding concentration distribution of dot defects of various nature, their probable models of association with participation of foreign impurity. Besides, the analysis of reversible processes of association opens ways of optimization of kinetics of diusive mass transfer at phase transformation of substrate of silicon into a lm of carbide of silicon. In the article dependences of concentration of neutral defects on factors of supersaturation of gas phase on conditional atomic concentration of carbon, from concentration of foreign impurity are given in a gas phase, from concentration of own defects of various nature having potential of formation of deep levels in the forbidden zone and potential of association. The analysis of the given dependences is made and recommendations about carrying out technological process of formation of dicult heterostructures of dierent function are made.