Open AccessPeculiarities of the method in internal formation of structures in bipolar and CMOS technologies
Author(s) -
В. А. Солодуха,
Солодуха Виталий Александрович,
Yuri P. Snitovsky,
Снитовский Юрий Павлович,
Yaroslav A. Solovyov,
Соловьев Ярослав Александрович
Publication year - 2019
Publication title -
vestnik ûgorskogo gosudarstvennogo universiteta
Language(s) - English
Resource type - Journals
eISSN - 2078-9114
pISSN - 1816-9228
DOI - 10.17816/byusu20190244-61
Subject(s) - cmos , common emitter , bipolar junction transistor , materials science , optoelectronics , doping , transistor , microwave , ion implantation , annealing (glass) , argon , ion , silicon , electrical engineering , chemistry , computer science , voltage , engineering , composite material , telecommunications , organic chemistry
The possibility of creating silicon bipolar high-power microwave transistors by the method of ion doping of monosilicon with B + ions through a layer of SiO2 and emitter windows in it with the subsequent introduction of P + ions into them and annealing in argon is shown. The developed process reduces the labor intensity of manufacturing and improves the frequency and power characteristics of transistors: increasing the cut-off frequency (collector current = 1.5 A) from 1.8 to 2.1 GHz and from 1.5 to 1.9 GHz (collector current = 2,8 A), output power from 20 to 21.3 W, power gain from 2.5 to 2.7, collector efficiency from 60 to 79.8 %. The formation of pockets of n- and p- type CMOS structures was considered using a mask of thermal SiO2 without a layer of Si3N4. The developed process reduces the labor intensity of manufacturing by ~ 21.5 % and increases the yield of CMOS microcircuit structures by ~ 4.5 %, thanks to a decrease in the residual stresses in monosilicon and the improvement of pocket doping methods.