Open AccessThe Electrical Properties of Fabricated Pentacene Based Phototransistor with Polystyrene Gate Insulator
Author(s) -
Şerif Rüzgar,
Müjdat Çağlar
Publication year - 2020
Publication title -
bitlis eren üniversitesi fen bilimleri dergisi
Language(s) - English
Resource type - Journals
eISSN - 2147-3188
pISSN - 2147-3129
DOI - 10.17798/bitlisfen.656800
Subject(s) - pentacene , materials science , optoelectronics , photodiode , polystyrene , fabrication , transistor , active layer , dielectric , gate dielectric , scanning electron microscope , layer (electronics) , thin film transistor , nanotechnology , electrical engineering , composite material , voltage , polymer , medicine , alternative medicine , engineering , pathology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom