Open AccessElectronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration
Author(s) -
O. Ozturk,
E. Oztürk,
S. Elagöz
Publication year - 2020
Publication title -
cumhuriyet science journal
Language(s) - English
Resource type - Journals
eISSN - 2587-246X
pISSN - 2587-2680
DOI - 10.17776/csj.652216
Subject(s) - quantum well , effective mass (spring–mass system) , wave function , condensed matter physics , semiconductor , electron , band gap , energy (signal processing) , quantum , materials science , physics , optoelectronics , chemistry , quantum mechanics , laser
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom