TRANSIÇÃO NO MODO DE CRESCIMENTO 2D PARA 3D DE INAS SOBRE GAAS ANALISADA POR FOTOLUMINESCÊNCIA | Zendy

AI Assistant Blog Pricing

Open Access

TRANSIÇÃO NO MODO DE CRESCIMENTO 2D PARA 3D DE INAS SOBRE GAAS ANALISADA POR FOTOLUMINESCÊNCIA

Author(s) -

Guilherme Monteiro Torelly

Publication year - 2016

Language(s) - Uncategorized

Resource type - Dissertations/theses

DOI - 10.17771/pucrio.acad.27483

Subject(s) - photoluminescence , quantum dot , gallium arsenide , transmission electron microscopy , indium , materials science , metalorganic vapour phase epitaxy , indium arsenide , optoelectronics , nanotechnology , epitaxy , layer (electronics)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom

About

About Careers Publisher Partners Contact Us Get Organisational Trial or Quote

Learn

FAQs Blog Terms of Use Privacy Policy

Download the Zendy App

Download on the

Discover

Explore

Copyright Knowledge E © 2026. All Rights Reserved.