Open AccessTemperature Dependence Of Energy States And Band Gap Broadening
Author(s) -
Sharibayev Nosirjon Yusufjanovich
Publication year - 2021
Publication title -
türk bilgisayar ve matematik eğitimi dergisi
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.218
H-Index - 3
ISSN - 1309-4653
DOI - 10.17762/turcomat.v12i4.471
Subject(s) - density of states , semiconductor , silicon , range (aeronautics) , band gap , surface states , thermal , energy (signal processing) , condensed matter physics , impurity , surface (topology) , function (biology) , materials science , physics , quantum mechanics , thermodynamics , mathematics , optoelectronics , geometry , evolutionary biology , biology , composite material
Statistical analysis of energy levels is carried out. The density of surface states of MIS structures based on silicon is investigated. A mathematical model is constructed for the temperature dependence of the spectrum of the density of surface states for a wide energy range. A formula is derived for the density of surface states as a function of temperature. The thermal contributions of the expanded bands to the band gap of the semiconductor are taken into account. The resulting formula allows one to determine the density of energy states in the forbidden band in an explicit form, without taking into account the influence of the broadening of the allowed bands. This improves the accuracy of determining the concentration of impurities and defects in silicon.