Open AccessNumerical simulation of low-voltage logic gates based on field-effect nanotransistors with a variable working area diameter
Author(s) -
Nikolae V. Masalsky
Publication year - 2022
Publication title -
radioèlektronika, nanosistemy, informacionnye tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.204
H-Index - 5
eISSN - 2414-1267
pISSN - 2218-3000
DOI - 10.17725/rensit.2022.14.233
Subject(s) - inverter , voltage , transistor , conical surface , materials science , cmos , subthreshold conduction , computer simulation , scaling , electrical engineering , electronic engineering , optoelectronics , engineering , mechanics , physics , geometry , mathematics , composite material