Open AccessThermoelectric model of a heterojunction bipolar transistor taking into account the voltage drop on the current-carrying metallization
Author(s) -
В. А. Сергеев,
A. M. Hodakov
Publication year - 2022
Publication title -
radioèlektronika, nanosistemy, informacionnye tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.204
H-Index - 5
eISSN - 2414-1267
pISSN - 2218-3000
DOI - 10.17725/rensit.2022.14.103
Subject(s) - common emitter , materials science , current density , voltage drop , thermoelectric effect , condensed matter physics , current (fluid) , crystal (programming language) , bipolar junction transistor , voltage , transistor , optoelectronics , thermodynamics , electrical engineering , physics , quantum mechanics , computer science , programming language , engineering