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Simulation of the characteristics of low-voltage gates on combined cylindrical surrounding gate field-effect nanotransistors
Author(s) -
Nikolae V. Masalsky,
AUTHOR_ID
Publication year - 2021
Publication title -
radioèlektronika, nanosistemy, informacionnye tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.204
H-Index - 5
eISSN - 2414-1267
pISSN - 2218-3000
DOI - 10.17725/rensit.2021.13.449
Subject(s) - nand gate , transistor , propagation delay , electronic engineering , voltage , logic gate , electrical engineering , engineering , materials science , computer science

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