Open AccessInvestigation of thin films for fabrication of Nb/AlN/NbN tunnel junctions and microstrip lines of NbTiN-SiO2-Al.
Author(s) -
Artem Chekushkin,
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L. V. Filippenko,
В. В. Кашин,
Mikhail Yu. Fominskiy,
V. P. Koshelets,
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AUTHOR_ID,
AUTHOR_ID,
AUTHOR_ID
Publication year - 2021
Publication title -
radioèlektronika, nanosistemy, informacionnye tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.204
H-Index - 5
eISSN - 2414-1267
pISSN - 2218-3000
DOI - 10.17725/rensit.2021.13.419
Subject(s) - fabrication , materials science , thin film , surface roughness , etching (microfabrication) , surface finish , sputter deposition , layer (electronics) , sputtering , root mean square , cavity magnetron , optoelectronics , optics , composite material , nanotechnology , electrical engineering , medicine , alternative medicine , physics , engineering , pathology
The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.