Open AccessManganese segregation on defects of a crystall lattice GaSb
Author(s) -
В. П. Саныгин,
О. Н. Пашкова,
А. Д. Изотов
Publication year - 2020
Publication title -
radioèlektronika, nanosistemy, informacionnye tehnologii
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.204
H-Index - 5
eISSN - 2414-1267
pISSN - 2218-3000
DOI - 10.17725/rensit.2020.12.341
Subject(s) - ferromagnetism , materials science , manganese , condensed matter physics , gallium antimonide , coercivity , anisotropy , magnetic semiconductor , doping , gallium , crystallography , metallurgy , chemistry , superlattice , optics , physics
When doping gallium antimonide with 2 at.% Mn, it was found that, as a result of quenching of the melt, manganese segregates on grain-forming dislocations of the crystalline GaSb (111) texture in the form of microinclusions based on the ferromagnetic compound MnSb. Manganese atoms segregate on GaSb dislocations discretely with periodic spacing of inclusions from each other. The dimensions of the inclusions are of the order of 1 μm, they differ in composition and magnetic properties, but on average their composition and properties correspond to the ferromagnetic phase Mn1,1Sb. At T = 4 K, the crystalline anisotropy of GaSb is accompanied by magnetic anisotropy; at T = 300 K, spherical clusters of a magnetic semiconductor retain the properties of a soft magnetic ferromagnet with a coercive force Hc ≈ 10 E.