Open AccessStudy of the Effect of Doping and Body Thickness in a 32 nm Strained-Si on Silicon-Germanium-on-Insulator (SS-SGOI) nMOSFET
Author(s) -
Pabitra Dey
Publication year - 2017
Publication title -
international journal of engineering research and technology
Language(s) - English
Resource type - Journals
ISSN - 2278-0181
DOI - 10.17577/ijertv6is040475
Subject(s) - germanium , materials science , doping , silicon on insulator , optoelectronics , silicon