Open AccessImproving breakdown voltage in LDMOS with doped silicon pockets in buried oxide
Author(s) -
H. D. Sunitha,
N. Keshaveni,
N. Keshaveni
Publication year - 2017
Publication title -
indian journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2017/v10i1/109412
Subject(s) - ldmos , breakdown voltage , materials science , silicon on insulator , doping , optoelectronics , silicon , voltage , figure of merit , electrical engineering , high voltage , electric field , mosfet , transistor , physics , engineering , quantum mechanics