Open AccessLow Power and High Variation Tolerant 9T-SRAM Cell at 16-nm Technology Node
Author(s) -
Soumitra Pal,
Aminul Islam
Publication year - 2016
Publication title -
indian journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2016/v9i40/99586
Subject(s) - computer science , transistor , process variation , robustness (evolution) , leakage (economics) , threshold voltage , nmos logic , voltage , electronic engineering , electrical engineering , process (computing) , biochemistry , chemistry , macroeconomics , economics , gene , engineering , operating system