Open AccessDesign of 10T SRAM Cell using Column-Line Assist and DTMOS Techniques
Author(s) -
Chandramauleshwar Roy,
Aminul Islam
Publication year - 2016
Publication title -
indian journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2016/v9i40/99509
Subject(s) - computer science , noise margin , static random access memory , path (computing) , topology (electrical circuits) , electronic engineering , voltage , transistor , electrical engineering , computer hardware , computer network , engineering