Open AccessTG based 2T2M RRAM using Memristor as Memory Element
Author(s) -
Chandramauleswar Roy,
Aminul Islam
Publication year - 2016
Publication title -
indian journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2016/v9i33/99508
Subject(s) - resistive random access memory , memristor , materials science , computer science , electrical engineering , engineering , voltage
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