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A low-leakage current power 45-nm CMOS SRAM
Author(s) -
Shyam Akashe
Publication year - 2011
Publication title -
indian journal of science and technology
Language(s) - Uncategorized
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2011/v4i4.3
Subject(s) - leakage power , leakage (economics) , static random access memory , cmos , voltage , memory cell , electrical engineering , computer science , power (physics) , electronic engineering , materials science , optoelectronics , transistor , physics , computer hardware , engineering , quantum mechanics , economics , macroeconomics

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