Open AccessModeling of a 6H-SiC MESFET for high-power and high-gain applications
Author(s) -
H. Arabshahi
Publication year - 2011
Publication title -
indian journal of science and technology
Language(s) - English
Resource type - Journals
eISSN - 0974-6846
pISSN - 0974-5645
DOI - 10.17485/ijst/2011/v4i1.1
Subject(s) - mesfet , bandwidth (computing) , transient (computer programming) , cutoff frequency , transistor , monte carlo method , steady state (chemistry) , materials science , frequency dependence , computational physics , transient response , field effect transistor , frequency response , optoelectronics , computer science , physics , electrical engineering , voltage , telecommunications , nuclear magnetic resonance , mathematics , engineering , statistics , chemistry , quantum mechanics , operating system