Open AccessActivation of film growth on indium phosphide by pulsed photon treatment
Author(s) -
Е. В. Томина,
Б. В. Сладкопевцев,
Д. В. Сериков,
I. Ya. Mittova
Publication year - 2021
Publication title -
kondensirovannye sredy i mežfaznye granicy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.13
H-Index - 2
eISSN - 2687-0711
pISSN - 1606-867X
DOI - 10.17308/kcmf.2021.23/3534
Subject(s) - indium phosphide , materials science , phosphide , heterojunction , thermal oxidation , raman spectroscopy , optoelectronics , indium , semiconductor , irradiation , analytical chemistry (journal) , chemistry , silicon , optics , metal , gallium arsenide , metallurgy , chromatography , nuclear physics , physics
Photon activation of various physicochemical processes by the radiation of powerful pulsed xenon lamps (radiation range of 0.2-1.2 µm) is one of the promising areas of material science. The aim of this study was to determine the effect of preoxidative pulsed photon treatment on the process of thermal oxidation of indium phosphide with a nanosized layer of V2O5 on the surface, as well as its effect on the composition and morphology of the formed films. We determined the optimal mode of pre-oxidative pulsed photon treatment of magnetron-formed V2O5/InP heterostructures with a radiation density of 15 J/cm2. By laser and spectral ellipsometry methods, photon activation of V2O5/InP before thermal oxidation was found to increase the thickness of the formed films practically twofold. X-ray diffraction analysis confirms the intensification of the phosphate formation process. The morphological characteristics of the films were determined by atomic force microscopy.Pre-oxidative pulsed photon treatment with an optimal radiation density of 15 J/cm2 activates the thermal oxidation of V2O5/InP heterostructures. It is associated with the formation of new active centres and accelerated rearrangement of chemical bonds in the intermediate complexes of the V2O5 catalyst with semiconductor components