Open AccessStructure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn>
Author(s) -
В. П. Саныгин,
О. Н. Пашкова,
А. Д. Изотов
Publication year - 2021
Publication title -
kondensirovannye sredy i mežfaznye granicy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.13
H-Index - 2
eISSN - 2687-0711
pISSN - 1606-867X
DOI - 10.17308/kcmf.2021.23/3533
Subject(s) - ferromagnetism , materials science , grain boundary , chemical composition , dislocation , condensed matter physics , coercivity , quenching (fluorescence) , superparamagnetism , stacking , texture (cosmology) , magnetic semiconductor , crystallography , microstructure , metallurgy , magnetization , chemistry , nuclear magnetic resonance , magnetic field , composite material , optics , physics , organic chemistry , image (mathematics) , quantum mechanics , artificial intelligence , computer science , fluorescence
The structure and chemical composition of grain boundaries in GaSb magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetic