Open AccessThe I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 2
Author(s) -
V.V. Buniatyan,
H. R. Dashtoyan,
A. Davtyan
Publication year - 2020
Publication title -
advanced materials and technologies
Language(s) - English
Resource type - Journals
eISSN - 2541-8513
pISSN - 2414-4606
DOI - 10.17277/amt.2020.04.pp.058-066
Subject(s) - materials science , poole–frenkel effect , oxygen , condensed matter physics , thin film , thermal , schottky diode , field (mathematics) , engineering physics , optoelectronics , physics , nanotechnology , thermodynamics , mathematics , quantum mechanics , diode , pure mathematics
In Part 2 of the paper, based on the results and assumptions pointed in Part 1, analytical expressions were derived for Schottky barrier thermal/field assisted and Poole-Frenkel emission currents. The computer modeling theoretical dependencies of the I–V characteristics has been compared with the experimental measured results and obtained good agreements.