Open AccessInvestigating physical model interface in the TCAD Sentaurus environment
Author(s) -
Maksim Kuznetsov,
S. Kalinin,
Alexey S. Cherkaev,
Dmitriy I. Ostertak
Publication year - 2020
Publication title -
sbornik naučnyh trudov ngtu
Language(s) - English
Resource type - Journals
ISSN - 2307-6879
DOI - 10.17212/2307-6879-2020-3-39-48
Subject(s) - rework , interface (matter) , computer science , software , physical design , transistor , mobility model , simulation , embedded system , electrical engineering , engineering , circuit design , operating system , telecommunications , bubble , voltage , maximum bubble pressure method
Currently, the application SDevice software package TCAD Sentaurus is a reliable tool for electrophysical simulation of silicon CMOS transistors operating in the temperature range of -60 °C – +125 °C. To adapt the modeling process to specific physical conditions of the devices, application SDevice has an extensive library of models of electrophysical parameters, in particular models of mobility or band gap energy. However, when the device operates under extreme cryogenic conditions, there is a need to rework these models using a special Physical Model Interface (PMI). The paper presents methodological features of work with PMI and results of implementation of custom parameter models for silicon devices.