
Design of Power - Gated 8T SRAM Cell Design with Improved PDP
Author(s) -
R Sumithra,
N Vaijayanthi
Publication year - 2019
Publication title -
international journal of innovative research in electrical, electronics, instrumentation and control engineering
Language(s) - English
Resource type - Journals
eISSN - 2321-5526
pISSN - 2321-2004
DOI - 10.17148/ijireeice.2019.7414
Subject(s) - static random access memory , power (physics) , computer science , electronic engineering , engineering , computer hardware , physics , quantum mechanics