Open AccessMinimization of leakage current through horizontal step doping in SOI MOSFETs
Author(s) -
P. Parmar,
Anshul Jain,
ABHAY KHEDKAR
Publication year - 2015
Publication title -
ijireeice
Language(s) - English
Resource type - Journals
eISSN - 2321-5526
pISSN - 2321-2004
DOI - 10.17148/ijireeice.2015.3123
Subject(s) - doping , leakage (economics) , materials science , silicon on insulator , optoelectronics , mosfet , reliability (semiconductor) , electrical engineering , silicon , power (physics) , transistor , voltage , physics , engineering , economics , macroeconomics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom