Open AccessLow Power Double Gate Fin FET Based Sense Amplifier
Author(s) -
Pallavi Priyadarshni,
Sangeeta Singh
Publication year - 2015
Publication title -
ijarcce
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2319-5940
pISSN - 2278-1021
DOI - 10.17148/ijarcce.2015.4361
Subject(s) - fet amplifier , electrical engineering , sense (electronics) , double gate , amplifier , fin , power (physics) , optoelectronics , materials science , computer science , physics , rf power amplifier , engineering , transistor , mosfet , cmos , voltage , quantum mechanics , composite material
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