Open AccessThe effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures
Author(s) -
V. V. Paramonov,
О. В. Новикова,
V. G. Kosushkin
Publication year - 2019
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2018-1-43-47
Subject(s) - etching (microfabrication) , epitaxy , bromine , chemistry , inorganic chemistry , substrate (aquarium) , dissolution , aqueous solution , sulfuric acid , ethylene glycol , hydrobromic acid , materials science , layer (electronics) , organic chemistry , oceanography , geology
The etching of wafers of cadmium telluride in aqueous and nonaqueous solutions before the epitaxial process of building structures Cd x Hg1- x Te and its influence on the surface quality of epitaxial layers. As the etchants investigated 2—20 % solution of bromine in isobutyl alcohol, 5 % solution of bromine in methanol, dimethylsulfoxide, ethylene glycol, solutions of bromine in hydrobromic acid and mixed with glycerin, a saturated solution of potassium dichromate in sulfuric acid. The speed of etching was varied from 0.2 to 9 µm/min. Polishing Set nature of the etching substrate of cadmium telluride in 5 % solution of bromine in i-butanol, the dissolution process is diffusion in nature and is limited by the mass transfer of the reactants in the temperature range of 10—60 °C, depending on the concentration of bromine and the viscosity of the solution. Studied the morphology and surface finish of epitaxial layers of Cd x Hg1- x Te, depending on the method of etching the original substrate. Found the optimal compositions of etchants for precipitaciones processing of obtaining structures with a height of asperities of the surface at 0.1 atm.